2sK2651-01MR n-channel mos-fet fap-iis series 900v 2,5w 6a 50w > features > outline drawing - high speed switching - low on-resistance - no secondary breakdown - low driving power - high voltage - v gs = 30v guarantee - repetitive avalanche rated > applications - switching regulators - ups - dc-dc converters - general purpose power amplifier > maximum ratings and characteristics > equivalent circuit - absolute maximum ratings ( t c =25c) , unless otherwise specified item symbol rating unit drain-source-voltage v ds 900 v continous drain current i d 6 a pulsed drain current i d(puls) 24 a gate-source-voltage v gs 30 v repetitive or non-repetitive (t ch 150c) i ar 6 a avalanche energy e as 71,9 mj max. power dissipation p d 50 w operating and storage temperature range t ch 150 c t stg -55 ~ +150 c - electrical characteristics (t c =25c) , unless otherwise specified item symbol test conditions min. typ. max. unit drain-source breakdown-voltage v (br)dss i d =1ma v g s =0v 900 v gate threshhold voltage v gs(th) i d =1m a v ds = v gs 3,5 4,0 4,5 v zero gate voltage drain current i dss v d s =900v t c h =25c 10 500 a v gs =0v t ch =125c 0,2 1,0 ma gate source leakage current i gss v g s =30v v d s =0v 10 100 na drain source on-state resistance r ds(on) i d =3a v g s =10v 1,87 2,5 w forward transconductance g fs i d =3a v d s =25v 4 s input capacitance c iss v d s =25v 900 pf output capacitance c oss v g s =0v 130 pf reverse transfer capacitance c rss f=1mhz 70 pf turn-on-time t on ( t on =t d(on) +t r ) t d(on) v cc =600v 25 ns t r i d =6a 80 ns turn-off-time t off (t on =t d(off) +t f ) t d(off) v gs =10v 70 ns t f r gs =1 0 w 40 ns avalanche capability i av l = 100h t c h =25c 6 a diode forward on-voltage v sd i f =2x i dr v g s =0v t c h =25c 1,0 v reverse recovery time t rr i f = i dr v g s =0v 850 ns reverse recovery charge q rr -d i f / d t =100a/s t c h =25c 8,5 c - thermal characteristics item symbol test conditions min. typ. max. unit thermal resistance r th(ch-c) channel to case 3,125 c/w r th(ch-a) channel to air 62,5 c/w collmer semiconductor - p.o. box 702708 - dallas tx - 75370 - 972.233.1589 - 972.233.0481 fax - www.collmer.com - 11/98
n-channel mos-fet 2sK2651-01MR 900v 2,5w 6a 50w fap-iis series > characteristics typical output characteristics drain-source-on-state resistance vs. t ch typical transfer characteristics - i d =f(v ds ); 80s pulse test; t c =25c - r ds(on) =f(tch): i d =3a; v gs =10v - i d =f(v gs ); 80s pulse test;v ds =25v; t ch =25c i d [a] 1 r ds(on) [ w ] 2 i d [a] 3 v ds [v] ? t ch [c] ? v gs [v] ? typical drain-source-on-state-resistance vs. i d typical forward transconductance vs. i d gate threshold voltage vs. t ch - r ds(on) =f(i d ); 80s pulse test; t c =25c - g fs =f(i d ); 80s pulse test; v ds =25v; t ch =25c - v gs(th) =f(t ch ); i d =1ma; v ds =v gs r ds(on) [ w ] 4 g fs [s] 5 v gs(th) [v] 6 i d [a] ? i d [a] ? t ch [c] ? typical capacitances vs. v ds avalanche energy derating forward characteristics of reverse diode - c=f(v ds ); v gs =0v; f=1mhz e as =f(starting t ch ); v cc =90v; i av =6a - i f =f(v sd ); 80s pulse test; v gs =0v c [f] 7 eas [mj] 8 i f [a] 9 v ds [v] ? starting tch [c] ? v sd [v] ? allowable power dissipation vs. t c safe operation area p d =f(tc) i d =f(v ds ): d=0,01, tc=25c - z th(ch-c) [k/w] transient thermal impedance - 10 - 12 z thch =f(t) parameter:d=t/t p d [w] i d [a] t c [c] ? v ds [v] ? t [s] ? this specification is subject to change without notice!
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